Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers
نویسندگان
چکیده
The review concentrates on the analysis of the RF hydrogen plasma effect on thin-film metal-dioxide-silicon and silicon-dioxide silicon structures which are a modern basis of microand nanoelectronics. The especial attention is paid to athermic mechanisms of transformation of defects in dioxide, SiO2-Si interface and SiO2-Si nanocrystal ones and thin layers of silicon; atomic hydrogen influence on the annealing of vacancy defects and the implanted impurity activation in a subsurface implanted silicon layer; and the hydrogen plasma effect on luminescent properties of nanostructured light emitting materials.
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